Semiconductor package

ABSTRACT

A semiconductor package includes a connection structure, a semiconductor chip, and an encapsulant. The connection structure includes an insulating layer, a redistribution layer disposed on the insulating layer, and a connection via penetrating through the insulating layer and connected to the redistribution layer. The semiconductor chip has an active surface on which connection pads are disposed and an inactive surface opposing the active surface, and the active surface is disposed on the connection structure to face the connection structure. The encapsulant covers at least a portion of the semiconductor chip. The semiconductor chip includes a groove formed in the active surface and a dam structure disposed around the groove in the active surface.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application claims benefit of priority to Korean Patent Application No. 10-2018-0146216 filed on Nov. 23, 2018 in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety.

BACKGROUND 1. Field

The present disclosure relates to a semiconductor package, and more particularly, to a fan-out semiconductor package in which electrical connection structures may extend outwardly of a region in which a semiconductor chip is disposed.

2. Description of Related Art

A significant recent trend in the development of technology related to semiconductor chips has been to reduce the size of semiconductor chips. Therefore, in the field of package technology, in accordance with a rapid increase in demand for small-sized semiconductor chips, or the like, the implementation of a semiconductor package having a compact size while including a plurality of pins has been demanded.

One type of semiconductor package technology suggested to satisfy the technical demand as described above is a fan-out semiconductor package. Such a fan-out package has a compact size and may allow a plurality of pins to be implemented by redistributing electrical connection structures outwardly of a region in which a semiconductor chip is disposed.

However, in a process of manufacturing the fan-out package, a defect that an encapsulant encapsulating the semiconductor chip bleeds into connection pads, or the like, has frequently occurred.

SUMMARY

An aspect of the present disclosure provides a semiconductor package in which a bleeding defect due to an encapsulant may be suppressed and reliability of vias may be improved.

According to an aspect of the present disclosure, a semiconductor package may include a connection structure, a semiconductor chip, and an encapsulant. The connection structure includes an insulating layer, a redistribution layer disposed on the insulating layer, and a connection via penetrating through the insulating layer and connected to the redistribution layer. The semiconductor chip has an active surface on which connection pads are disposed and an inactive surface opposing the active surface, and the active surface is disposed on the connection structure to face the connection structure. The encapsulant covers at least a portion of the semiconductor chip, and the semiconductor chip includes a groove formed in the active surface and a dam structure disposed around the groove in the active surface.

The groove may be disposed between an edge of the semiconductor chip and the connection pads.

The groove may be continuously formed along an edge around a periphery of the active surface of the semiconductor chip.

The semiconductor chip may include a plurality of grooves, including the groove, each continuously formed along a respective edge of the active surface of the semiconductor chip and disconnected from each other.

The semiconductor chip may include a passivation layer extending along corner regions of the active surface between adjacent grooves of the plurality of grooves.

The groove may have a plurality of inclined surfaces, inclined at different angles with respect to the active surface.

The groove may be a laser-machined groove penetrating into the active surface.

The dam structure may be a burr formed by laser-machining the semiconductor chip and extending outwardly from the active surface.

The semiconductor package may include a frame disposed on the connection structure and having a through-hole having the semiconductor chip disposed therein.

The encapsulant may fill the through-hole, and cover the inactive surface and side surfaces of the semiconductor chip.

The encapsulant may extend to a portion of the active surface of the semiconductor chip.

The encapsulant may be filled in at least a portion of the groove.

According to another aspect of the disclosure, a semiconductor chip includes a body having a planar surface, a plurality of connection pads disposed along the planar surface and electrically connected to electrical circuits in the body, a groove penetrating into the planar surface along a periphery of the planar surface, and a dam extending from the planar surface along a periphery of the groove. The groove and dam are disposed between the plurality of connection pads and an edge of the planar surface of the body.

BRIEF DESCRIPTION OF DRAWINGS

The above and other aspects, features and other advantages of the present disclosure will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

FIG. 1 is a schematic block diagram illustrating an example of an electronic device system;

FIG. 2 is a schematic perspective view illustrating an example of an electronic device;

FIGS. 3A and 3B are schematic cross-sectional views illustrating a fan-in semiconductor package before and after being packaged;

FIG. 4 is a schematic cross-sectional view illustrating a packaging process of a fan-in semiconductor package;

FIG. 5 is a schematic cross-sectional view illustrating a fan-in semiconductor package mounted on a printed circuit board and finally mounted on a main board of an electronic device;

FIG. 6 is a schematic cross-sectional view illustrating a fan-in semiconductor package embedded in a printed circuit board and finally mounted on a main board of an electronic device;

FIG. 7 is a schematic cross-sectional view illustrating a fan-out semiconductor package;

FIG. 8 is a schematic cross-sectional view illustrating a fan-out semiconductor package mounted on a main board of an electronic device;

FIG. 9 is a schematic cross-sectional view illustrating an example of a semiconductor package in accordance with the principles of the disclosure;

FIG. 10 is a cross-sectional view illustrating a groove of a semiconductor chip that may be used in the semiconductor package of FIG. 9;

FIG. 11 is a schematic plan view taken along line I-I′ of the semiconductor package of FIG. 9;

FIG. 12 is another schematic plan view taken along line I-I′ of the semiconductor package of FIG. 9; and

FIGS. 13 and 14 illustrate a semiconductor package according to modified examples.

DETAILED DESCRIPTION

Hereinafter, exemplary embodiments in the present disclosure will be described with reference to the accompanying drawings. In the accompanying drawings, shapes, sizes, and the like, of components may be exaggerated or shortened for clarity.

Electronic Device

FIG. 1 is a schematic block diagram illustrating an example of an electronic device system.

Referring to FIG. 1, an electronic device 1000 may accommodate a main board 1010 therein. The main board 1010 may include chip related components 1020, network related components 1030, other components 1040, and the like, physically or electrically connected thereto. These components may be connected to others to be described below to form various signal lines 1090.

The chip related components 1020 may include a memory chip such as a volatile memory (for example, a dynamic random access memory (DRAM)), a non-volatile memory (for example, a read only memory (ROM)), a flash memory, or the like; an application processor chip such as a central processor (for example, a central processing unit (CPU)), a graphics processor (for example, a graphics processing unit (GPU)), a digital signal processor, a cryptographic processor, a microprocessor, a microcontroller, or the like; and a logic chip such as an analog-to-digital converter (ADC), an application-specific integrated circuit (ASIC), or the like. However, the chip related components 1020 are not limited thereto, but may also include other types of chip related components. In addition, the chip related components 1020 may be combined with each other.

The network related components 1030 may include protocols such as wireless fidelity (Wi-Fi) (Institute of Electrical And Electronics Engineers (IEEE) 802.11 family, or the like), worldwide interoperability for microwave access (WiMAX) (IEEE 802.16 family, or the like), IEEE 802.20, long term evolution (LTE), evolution data only (Ev-DO), high speed packet access+(HSPA+), high speed downlink packet access+(HSDPA+), high speed uplink packet access+(HSUPA+), enhanced data GSM environment (EDGE), global system for mobile communications (GSM), global positioning system (GPS), general packet radio service (GPRS), code division multiple access (CDMA), time division multiple access (TDMA), digital enhanced cordless telecommunications (DECT), Bluetooth, 3G, 4G, and 5G protocols, and any other wireless and wired protocols designated after the abovementioned protocols. However, the network related components 1030 are not limited thereto, but may also include a variety of other wireless or wired standards or protocols. In addition, the network related components 1030 may be combined with each other, together with the chip related components 1020 described above.

Other components 1040 may include a high frequency inductor, a ferrite inductor, a power inductor, ferrite beads, a low temperature co-firing ceramic (LTCC), an electromagnetic interference (EMI) filter, a multilayer ceramic capacitor (MLCC), and the like. However, other components 1040 are not limited thereto, and may also include passive components used for various other purposes, and the like. In addition, other components 1040 may be combined with each other, together with the chip related components 1020 or the network related components 1030 described above.

Depending on a type of the electronic device 1000, the electronic device 1000 may include other components that may or may not be physically and/or electrically connected to the main board 1010. These other components may include, for example, a camera 1050, an antenna 1060, a display device 1070, a battery 1080, an audio codec (not illustrated), a video codec (not illustrated), a power amplifier (not illustrated), a compass (not illustrated), an accelerometer (not illustrated), a gyroscope (not illustrated), a speaker (not illustrated), a mass storage unit (for example, a hard disk drive) (not illustrated), a compact disk (CD) drive (not illustrated), a digital versatile disk (DVD) drive (not illustrated), or the like. However, these other components are not limited thereto, but may also include other components used for various purposes depending on a type of electronic device 1000, or the like.

The electronic device 1000 may be a smartphone, a personal digital assistant (PDA), a digital video camera, a digital still camera, a network system, a computer, a monitor, a tablet personal computer (PC), a laptop PC, a netbook PC, a television, a video game machine, a smartwatch, an automotive, or the like. However, the electronic device 1000 is not limited thereto, but may be any other electronic device processing data.

FIG. 2 is a schematic perspective view illustrating an example of an electronic device.

Referring to FIG. 2, a semiconductor package may be used for various purposes in the various electronic devices 1000 as described above. For example, a printed circuit board 1110 such as a main board or the like may be accommodated in a body 1101 of a smartphone 1100, and various electronic components 1120 may be physically or electrically connected to the printed circuit board 1110. In addition, other components that may or may not be physically or electrically connected to the printed circuit board 1110, such as a camera module 1130, may be accommodated in the body 1101. Some of the electronic components 1120 may be the chip related components, for example, a semiconductor package 1121, but are not limited thereto. The electronic device is not necessarily limited to the smartphone 1100, but may be other electronic devices as described above.

Semiconductor Package

Generally, numerous fine electrical circuits are integrated in a semiconductor chip. However, the semiconductor chip may not serve as a finished semiconductor product in itself, and may be damaged due to external physical or chemical impacts. Therefore, the semiconductor chip itself may not be used, but may be packaged and used in an electronic device, or the like, in a packaged state.

Here, semiconductor packaging is used to compensate for a difference in a circuit width between the semiconductor chip and a main board of the electronic device in terms of electrical connections. In detail, a size of connection pads of the semiconductor chip and an interval between the connection pads of the semiconductor chip are very fine, but a size of component mounting pads of the main board used in the electronic device and an interval between the component mounting pads of the main board are significantly larger than those of the semiconductor chip. Therefore, it may be difficult to directly mount the semiconductor chip on the main board, and packaging technology for buffering a difference in a circuit width between the semiconductor chip and the main board is advantageously used.

A semiconductor package manufactured by the packaging technology may be classified as a fan-in semiconductor package or a fan-out semiconductor package depending on a structure and a purpose thereof.

The fan-in semiconductor package and the fan-out semiconductor package will hereinafter be described in more detail with reference to the drawings.

Fan-in Semiconductor Package

FIGS. 3A and 3B are schematic cross-sectional views illustrating states of a fan-in semiconductor package before and after being packaged.

FIG. 4 is a schematic cross-sectional view illustrating a packaging process of a fan-in semiconductor package.

Referring to the drawings, a semiconductor chip 2220 may be, for example, an integrated circuit (IC) in a bare state, including a body 2221 including silicon (Si), germanium (Ge), gallium arsenide (GaAs), or the like, connection pads 2222 formed on one surface of the body 2221 and including a conductive material such as aluminum (Al), or the like, and a passivation layer 2223 such as an oxide film, a nitride film, or the like, formed on one surface of the body 2221 and covering at least portions of the connection pads 2222. In this case, since the connection pads 2222 are significantly small, it is difficult to mount the integrated circuit (IC) on an intermediate level printed circuit board (PCB) as well as on the main board of the electronic device, or the like.

Therefore, a connection structure 2240 may be formed depending on a size of the semiconductor chip 2220 on the semiconductor chip 2220 in order to redistribute the connection pads 2222. The connection structure 2240 may be formed by forming an insulating layer 2241 on the semiconductor chip 2220 using an insulating material such as photo imagable dielectric (PID) resin, forming via holes 2243 h opening the connection pads 2222, and then forming wiring patterns 2242 and vias 2243. Then, a passivation layer 2250 protecting the connection structure 2240 may be formed, an opening 2251 may be formed, and an underbump metal layer 2260, or the like, may be formed. That is, a fan-in semiconductor package 2200 including, for example, the semiconductor chip 2220, the connection structure 2240, the passivation layer 2250, and the underbump metal layer 2260 may be manufactured through a series of processes.

As described above, the fan-in semiconductor package may have a package form in which all of the connection pads, for example, input/output (I/O) terminals, of the semiconductor chip are disposed inside the semiconductor chip, and may have excellent electrical characteristics and be produced at a low cost. Therefore, many elements mounted in smartphones have been manufactured in a fan-in semiconductor package form. In detail, many elements mounted in smartphones have been developed to implement a rapid signal transfer while having a compact size.

However, since all I/O terminals need to be disposed inside the semiconductor chip in the fan-in semiconductor package, the fan-in semiconductor package has a large spatial limitation. Therefore, it is difficult to apply this structure to a semiconductor chip having a large number of I/O terminals or a semiconductor chip having a compact size. In addition, due to the disadvantage described above, the fan-in semiconductor package may not be directly mounted and used on the main board of the electronic device. The reason is that even in a case that a size of the I/O terminals of the semiconductor chip and an interval between the I/O terminals of the semiconductor chip are increased by a redistribution process, the size of the I/O terminals of the semiconductor chip and the interval between the I/O terminals of the semiconductor chip may not be sufficient to directly mount the fan-in semiconductor package on the main board of the electronic device.

FIG. 5 is a schematic cross-sectional view illustrating a case in which a fan-in semiconductor package is mounted on a printed circuit board and is finally mounted on a main board of an electronic device.

FIG. 6 is a schematic cross-sectional view illustrating a case in which a fan-in semiconductor package is embedded in a printed circuit board and is finally mounted on a main board of an electronic device.

Referring to FIGS. 5 and 6, in a fan-in semiconductor package 2200, connection pads 2222, that is, I/O terminals, of a semiconductor chip 2220 may be redistributed through a printed circuit board 2301, and the fan-in semiconductor package 2200 may be finally mounted on a main board 2500 of an electronic device in a state in which it is mounted on the printed circuit board 2301. In this case, solder balls 2270, and the like, may be fixed by an underfill resin 2280, or the like, and an outer side of the semiconductor chip 2220 may be covered with a molding material 2290, or the like. Alternatively, a fan-in semiconductor package 2200 may be embedded in a separate printed circuit board 2302, connection pads 2222, that is, I/O terminals, of the semiconductor chip 2220 may be redistributed by the printed circuit board 2302 in a state in which the fan-in semiconductor package 2200 is embedded in the printed circuit board 2302, and the fan-in semiconductor package 2200 may be finally mounted on a main board 2500 of an electronic device.

As described above, it may be difficult to directly mount and use the fan-in semiconductor package on the main board of the electronic device. Therefore, the fan-in semiconductor package may be mounted on the separate printed circuit board and be then mounted on the main board of the electronic device through a packaging process or may be mounted and used on the main board of the electronic device in a state in which it is embedded in the printed circuit board.

Fan-Out Semiconductor Package

FIG. 7 is a schematic cross-sectional view illustrating a fan-out semiconductor package.

Referring to FIG. 7, in a fan-out semiconductor package 2100, for example, an outer side of a semiconductor chip 2120 may be protected by an encapsulant 2130, and connection pads 2122 of the semiconductor chip 2120 may be redistributed outwardly of the semiconductor chip 2120 by a connection structure 2140. Here, a passivation layer 2150 may be further formed on the connection structure 2140, and underbump metal layers 2160 may be further formed in openings of the passivation layer 2150. Solder balls 2170 may further be formed on the underbump metal layer 2160. The semiconductor chip 2120 may be an integrated circuit (IC) including a body 2121, the connection pads 2122, and the like. The connection structure 2140 may include an insulating layer 2141, wiring layers 2142 formed on the insulating layer 2241, and vias 2143 electrically connecting the connection pads 2122 and the wiring layers 2142 to each other.

As described above, the fan-out semiconductor package may have a form in which I/O terminals of the semiconductor chip are redistributed and disposed outwardly of the semiconductor chip through the connection structure formed on the semiconductor chip. As described above, in the fan-in semiconductor package, all I/O terminals of the semiconductor chip need to be disposed inside the semiconductor chip. Therefore, when a size of the semiconductor chip is decreased, a size and a pitch of balls need to be decreased, such that a standardized ball layout may not be used in the fan-in semiconductor package. On the other hand, the fan-out semiconductor package has the form in which the I/O terminals of the semiconductor chip are redistributed and disposed outwardly of the semiconductor chip through the connection structure formed on the semiconductor chip as described above. Therefore, even in a case that a size of the semiconductor chip is decreased, a standardized ball layout may be used in the fan-out semiconductor package as it is, such that the fan-out semiconductor package may be mounted on the main board of the electronic device without using a separate printed circuit board, as described below.

FIG. 8 is a schematic cross-sectional view illustrating a case in which a fan-out semiconductor package is mounted on a main board of an electronic device.

Referring to FIG. 8, a fan-out semiconductor package 2100 may be mounted on a main board 2500 of an electronic device through solder balls 2170, or the like. That is, as described above, the fan-out semiconductor package 2100 includes the connection structure 2140 formed on the semiconductor chip 2120 and capable of redistributing the connection pads 2122 to a fan-out region that is outside of a size of the semiconductor chip 2120, such that the standardized ball layout may be used in the fan-out semiconductor package 2100 as it is. As a result, the fan-out semiconductor package 2100 may be mounted on the main board 2500 of the electronic device without using a printed circuit board, or the like.

As described above, since the fan-out semiconductor package may be mounted on the main board of the electronic device without using the separate printed circuit board, the fan-out semiconductor package may be implemented at a thickness lower than that of the fan-in semiconductor package using the printed circuit board. Therefore, the fan-out semiconductor package may be miniaturized and thinned. In addition, the fan-out semiconductor package has excellent thermal characteristics and electrical characteristics, such that it is particularly appropriate for a mobile product. Therefore, the fan-out semiconductor package may be implemented in a form more compact than that of a general package-on-package (POP) type using a printed circuit board (PCB), and may solve a problem due to occurrence of a warpage phenomenon.

Meanwhile, the fan-out semiconductor package refers to package technology for mounting the semiconductor chip on the main board of the electronic device, or the like, as described above, and protecting the semiconductor chip from external impacts, and is a concept different from that of a printed circuit board (PCB) such as a printed circuit board, or the like, having a scale, a purpose, and the like, different from those of the fan-out semiconductor package, and having the fan-in semiconductor package embedded therein.

A semiconductor package in which a bleeding defect due to an encapsulant may be suppressed and reliability of vias may be improved will hereinafter be described with reference to the drawings.

FIG. 9 is a schematic cross-sectional view illustrating an example of a semiconductor package. FIG. 10 is a cross-sectional view illustrating a groove of a semiconductor chip that may be used in the semiconductor package of FIG. 9. FIG. 11 is a schematic plan view taken along line I-I′ of the semiconductor package of FIG. 9. FIG. 12 is another schematic plan view taken along line I-I′ of the semiconductor package of FIG. 9.

Referring to FIG. 9, a semiconductor package 100A according to an exemplary embodiment may include a connection structure 140, a semiconductor chip 120, an encapsulant 130, and the like as main components. A groove 124 and a dam structure 126 around the groove 124 may be formed in an active surface of the semiconductor chip 120. In addition to the components described above, the semiconductor package 100A may further include a frame 110, a passivation layer 150, underbump metals 160, electrical connection metals 170, and the like.

The frame 110 may further improve rigidity of the semiconductor package 100A depending on certain materials, and serve to secure uniformity of a thickness of the encapsulant 130. When through-wirings, or the like, are formed in the frame 110 as in an exemplary embodiment to be described below, the semiconductor package 100A may be utilized as a package-on-package (POP) type package. According to the present exemplary embodiment, the frame 110 may have a through-hole 110H, and the semiconductor chip 120 may be disposed in the through-hole 110H. In this case, side surfaces of the semiconductor chip 120 may be surrounded by the frame 110. However, such a form is only an example and may be variously modified to have other forms, and the frame 110 may perform another function depending on such a form. The frame 110 may be omitted, but it may be more advantageous in securing board level reliability when the semiconductor package 100A includes the frame 110.

The frame 110 may include an insulating layer 111. An insulating material may be used as the material of the insulating layer 111. In this case, the insulating material may be a thermosetting resin such as an epoxy resin, a thermoplastic resin such as polyimide, a resin in which the thermosetting resin or the thermoplastic resin is mixed with inorganic filler or is impregnated together with inorganic filler in a core material such as a glass fiber (a glass cloth or a glass fabric), for example, prepreg, Ajinomoto Build-up Film (ABF), FR-4, Bismaleimide Triazine (BT), or the like. Such a frame 110 may serve as a support member.

The semiconductor chip 120 may be disposed on the connection structure 140 and may be an integrated circuit (IC) providing in an amount of several hundreds to several millions or more elements integrated in a single chip. In this case, the IC may be, for example, an application processor chip such as a central processor (for example, a CPU), a graphic processor (for example, a GPU), a digital signal processor, a cryptographic processor, a micro processor, a micro controller, or the like, but is not limited thereto. For example, the IC may also be a memory chip such as a power management IC (PMIC), a volatile memory (for example, a DRAM), a non-volatile memory (for example, a ROM), a flash memory, or the like, or a logic chip such as an analog-to-digital converter, an application-specific IC (ASIC), or the like.

The semiconductor chip 120 may be an integrated circuit in a bare state in which a separate bump or wiring layer is not formed. However, the semiconductor chip 120 is not limited thereto, but may also be a packaged type IC. The integrated circuit may be formed on the basis of an active wafer. In this case, a base material of the body 121 of the semiconductor chip 120 may be silicon (Si), germanium (Ge), gallium arsenide (GaAs), or the like. Various circuits may be formed on the body 121. The connection pads 122 may electrically connect the semiconductor chip 120 to other components. A material of each of the connection pads 122 may be a metal material such as aluminum (Al), or the like without being particularly limited. Meanwhile, a surface of the semiconductor chip 120 on which the connection pads 122 are disposed may be an active surface, and a surface of the semiconductor chip 120 opposing the active surface may be an inactive surface.

The encapsulant 130 may cover at least a portion of the semiconductor chip 120, and may encapsulate the frame 110 and the semiconductor chip 120 as shown. In addition, the encapsulant 130 may fill at least a portion of the through-hole 110H, cover an inactive surface and the side surfaces of the semiconductor chip 120, and cover a portion of the active surface (e.g., the surface having the connection pad(s) 122) of the semiconductor chip 120. The encapsulant 130 may include an insulating material, and the insulating material may be a material including an inorganic filler and an insulating resin, for example, a thermosetting resin such as an epoxy resin, a thermoplastic resin such as polyimide, a resin having a reinforcing material such as inorganic filler impregnated in the thermosetting resin and the thermoplastic resin, such as Ajinomoto Build up Film (ABF), FR-4, Bismaleimide Triazine (BT) resin, or the like. In addition, a molding material such as an epoxy molding compound (EMC) may be used, and a photo imagable dielectric material, that is, a photo imagable encapsulant (PIE) may also be used. Alternatively or additionally, a material in which an insulating resin such as a thermosetting resin or a thermoplastic resin is impregnated in inorganic filler and/or a core material such as a glass fiber (a glass cloth or a glass fabric) may also be used as the insulating material.

In the present exemplary embodiment, as shown in FIG. 9, the semiconductor chip 120 may include the groove 124 formed in the active surface thereof, and the dam structure 126 may be disposed around the groove 124 in the active surface. For example, the dam structure 126 may be provided on one or both sides of the groove 124. Generally, in the semiconductor package, the semiconductor chip 120 may be protected by covering an inactive surface and side surfaces of the semiconductor chip with the encapsulant 130. In this case, a material of the encapsulant before being cured may unintentionally bleed onto the active surface of the semiconductor chip in an encapsulating process. Therefore, connection pads formed on the active surface may be polluted by the encapsulant which may encroach onto the connection pads 122 and hinder establishment of electrical contact between the connection pads 122 and a redistribution layer 142 a. In this case, when a redistribution layer connected to the connection pads are formed in the subsequent process, an open defect of vias, a decrease in connectivity of the vias, electrical short-circuit, and the like, occur, such that reliability of the vias may be decreased.

On the other hand, in the semiconductor chip 100A according to the exemplary embodiment, the groove 124 may be formed between the edge of the semiconductor chip 120 and the connection pads 122 on the active surface of the semiconductor chip 120 on which the connection pads 122 are formed. The groove 124 may be continuously formed along the edge of the semiconductor chip 120, and may thereby extend along an entire periphery of the active surface. That is, a plurality of connection pads 122 may be surrounded by one groove 124 continuously formed to surround the connection pads 122. Therefore, even if a material of the encapsulant 130 before being cured permeates onto the active surface of the semiconductor chip 120 on which the connection pads 122 are formed when the semiconductor chip 120 is encapsulated with the encapsulant 130, a phenomenon that the material of the encapsulant 130 bleeds up to the connection pads 122 may be prevented or blocked by the groove 124. Resultantly, a problem such as the decrease in the reliability of the vias, or the like, as described above may be prevented. In this case, as shown in FIG. 10, the encapsulant 130 may be filled in or extend into at least a portion of the groove 124. Further, as in the present exemplary embodiment, when the dam structure 126 is formed around the groove 124, the permeation of the material of the encapsulant 130 may be blocked in advance and the bleeding may thus be more effectively reduced.

Such a dam structure 126 may be formed around the groove 124 to surround the groove 124 as shown in FIG. 11, and may be formed in the form similar to the groove 124 when viewed from above. In other words, when viewed from above, the dam structure 126 may have the same shape as the groove 124, but differ in size. The dam structure 126 may be formed on one or both sides of the groove 124, and may continuously extend along an entire periphery of the active surface to surround the connection pads 122.

In addition, in a case in which the groove 124 is continuously formed along the edge of the semiconductor chip 120 as shown in FIG. 11, a space into which the material of the encapsulant 130 may bleed may be completely blocked, such that a blocking effect may be particularly excellent. The groove 124 may be recessed from the active surface of the semiconductor chip 120 towards the inactive surface thereof at a predetermined depth, and may be a laser-machined groove. In this case, as shown in FIG. 9, the groove 124 may have a plurality of inclined surfaces, inclined at different angles (e.g., different angles relative to the active surface). In addition, when the groove 124 is implemented by laser machining, the dam structure 126 may be a burr formed by laser-machining the semiconductor chip 120. As such, the dam structure 126 may be formed around the groove 124 by a separate process, or may be naturally formed around the groove 124 in a process of forming the groove 124 during the laser machining.

Therefore, process efficiency may be improved. When the dam structure 126 is the burr formed by the laser machining, a surface of the dam structure 126 may be non-uniform, in that it is a deposition of laser machining by-products.

Alternatively, the groove 124 may not have an integrated structure that extends around the entire periphery of the active surface and may instead present as a plurality of separated regions. That is, as shown in FIG. 12, the groove 124 may include a plurality of grooves 124 continuously formed, respectively, along a plurality of edges 120S1, 120S2, 120S3, and 120S4 of a semiconductor chip 120 and disconnected from or spaced apart from each other. In more detail, the plurality of grooves 124 may include a plurality of grooves 124 each taking the form of a continuously formed segment, respectively, along first to fourth edges 120S1, 120S2, 120S3, and 120S4 and disconnected from each other at corner portions of the semiconductor chip 120. In addition, dam structures 126 corresponding to the plurality of grooves 124 or segments may be disposed around the plurality of grooves 124 or segments to block the bleeding in advance. As described above, also in a case in which the plurality of grooves 124 or segments are continuously formed, respectively, along the edges 120S1, 120S2, 120S3, and 120S4 of the semiconductor chip 120, at least a plurality of connection pads 122 may be protected from bleeding of the material of the encapsulant 130. When the plurality of grooves 124 or segments and the dam structures 126 are locally formed, the semiconductor chip 120 may include a passivation layer 123 covering corner regions of the active surface, as shown in FIG. 12, and may block the material of the encapsulant 130 permeated from the corner regions by the passivation layer 123. The passivation layer 123 may be an oxide film, a nitride film, or the like, or a double layer of an oxide film and a nitride film. The passivation layer 123 may be formed in other regions in addition to the corner regions of the semiconductor chip 120 to protect the semiconductor chip 120, and may also cover portions of the connection pads 122. In general, the passivation layer 123 may be provided between adjacent segments of the grooves 124, and may extend to substantially fill the space between the adjacent segments of the grooves 124.

Again, other components of the semiconductor package 100A will be described with reference to FIG. 9. The connection structure 140 may redistribute the connection pads 122 of the semiconductor chip 120. Several tens to several hundreds of connection pads 122 of the semiconductor chip 120 having various functions may be redistributed by the connection structure 140, and may be physically and/or electrically externally connected through the electrical connection metals 170 depending on the functions. To this end, the connection structure 140 may include conductive redistribution layers 142 a, 142 b, and 142 c. As an example, the connection structure 140 may include a first insulating layer 141 a disposed on and/or contacting the frame 110 and the active surface of the semiconductor chip 120, a first redistribution layer 142 a disposed on the first insulating layer 141 a, a first connection via 143 a connecting the first redistribution layer 142 a and the connection pads 122 of the semiconductor chip 120 to each other through the first insulating layer 141 a, a second insulating layer 141 b disposed on the first insulating layer 141 a, a second redistribution layer 142 b disposed on the second insulating layer 141 b, a second connection via 143 b penetrating through the second insulating layer 141 b and connecting the first and second redistribution layers 142 a and 142 b to each other, a third insulating layer 141 c disposed on the second insulating layer 141 b, a third redistribution layer 142 c disposed on the third insulating layer 141 c, and a third connection via 143 c penetrating through the third insulating layer 141 c and connecting the second and third redistribution layers 142 b and 142 c to each other. The first to third redistribution layers 142 a, 142 b, and 142 c may be electrically connected to connection pads 122 of the semiconductor chip 120. However, the number of redistribution layers 142 a, 142 b, and 142 c, insulating layers 141 a, 141 b, and 141 c, and connection vias 143 a, 143 b, and 143 c may be changed, as desired.

An insulating material included in the insulating layers 141 a, 141 b, and 141 c may also be, for example, a photo imagable dielectric material. When the insulating layers 141 a, 141 b, and 141 c have photo imagable dielectric properties, the insulating layers 141 a, 141 b, and 141 c may be formed to have a smaller thickness, and fine pitches of the connection vias 143 a, 143 b, and 143 c may be achieved more easily. Each of the insulating layers 141 a, 141 b, and 141 c may be a photo imagable dielectric insulating layer including an insulating resin and inorganic filler. When the insulating layers 141 a, 141 b, and 141 c are multiple layers, the materials of the insulating layers 141 a, 141 b, and 141 c may be the same as each other, and may alternatively be different from each other. When the insulating layers 141 a, 141 b, and 141 c are the multiple layers, the insulating layers 141 a, 141 b, and 141 c may be integrated with each other depending on a process, such that a boundary therebetween may also not be apparent. A larger number of insulating layers than those illustrated in the drawing may be formed.

The redistribution layers 142 a, 142 b, and 142 c may serve to substantially redistribute the connection pads 122. A material of each of the redistribution layers 142 a, 142 b, and 142 c may be a conductive material such as copper (Cu), aluminum (Al), silver (Ag), tin (Sn), gold (Au), nickel (Ni), lead (Pb), titanium (Ti), or alloys thereof. The redistribution layers 142 a, 142 b, and 142 c may perform various functions depending on designs of their corresponding layers. For example, the redistribution layers 142 a, 142 b, and 142 c may include ground patterns, power patterns, signal patterns, and the like. Here, the signal patterns may include various signals except for the ground patterns, the power patterns, and the like, such as data signals, and the like. In addition, the redistribution layers 142 a, 142 b, and 142 c may include via pad patterns, connection terminal pad patterns, and the like.

The connection vias 143 a, 143 b, and 143 c may electrically connect the redistribution layers 142 a, 142 b, and 142 c, the connection pads 122, or the like, formed on different layers to each other, resulting in an electrical path in the semiconductor package 100A. A material of each of the connection vias 143 a, 143 b, and 143 c may be a conductive material such as copper (Cu), aluminum (Al), silver (Ag), tin (Sn), gold (Au), nickel (Ni), lead (Pb), titanium (Ti), or alloys thereof. Each of the connection vias 143 a, 143 b, and 143 c may be completely filled with the conductive material, or the conductive material may also be formed along a wall of each of the vias. In addition, each of the connection vias 143 a, 143 b, and 143 c may have all of the shapes known in the related art, such as a tapered shape, a cylindrical shape, and the like.

The passivation layer 150 may protect the connection structure 140 from external physical or chemical damage. The passivation layer 150 may have openings 151 exposing at least portions of the redistribution layers 142 a, 142 b, and/or 142 c of the connection structure 140. The number of openings 151 formed in the passivation layer 150 may be several tens to several thousands. A material of the passivation layer 150 is not particularly limited. For example, an insulating material may be used as the material of the passivation layer 150. In this case, the insulating material may be a thermosetting resin such as an epoxy resin, a thermoplastic resin such as polyimide, a resin in which the thermosetting resin or the thermoplastic resin is mixed with inorganic filler, or impregnated together with inorganic filler in a core material such as a glass fiber (a glass cloth or a glass fabric), for example, prepreg, Ajinomoto Build-up Film (ABF), FR-4, Bismaleimide Triazine (BT), or the like. Alternatively, a solder resist may also be used.

The underbump metals 160 may improve connection reliability of the electrical connection metals 170 to improve board level reliability of the semiconductor package 100A. The underbump metals 160 may be connected to the redistribution layers 142 a, 142 b, and 142 c of the connection structure 140 exposed through the openings 151 of the passivation layer 150. The underbump metals 160 may be formed in the openings 151 of the passivation layer 150 by the known metallization method using the known conductive material such as a metal, but are not limited thereto.

The electrical connection metals 170 may physically and/or electrically externally connect the semiconductor package 100A. For example, the semiconductor package 100A may be mounted on a main board of the electronic device through the electrical connection metals 170. Each of the electrical connection metals 170 may be formed of a conductive material, for example, a solder, or the like. However, this is only an example, and a material of each of the electrical connection metals 170 is not particularly limited thereto. Each of the electrical connection metals 170 may be a land, a ball, a pin, or the like. The electrical connection metals 170 may be formed as a multilayer or single layer structure. When the electrical connection metals 170 are formed as a multilayer structure, the electrical connection metals 170 may include a copper (Cu) pillar and a solder. When the electrical connection metals 170 are formed as a single layer structure, the electrical connection metals 170 may include a tin-silver solder or copper (Cu). However, this is only an example, and the electrical connection metals 170 are not limited thereto.

The number, interval, disposition form, and the like, of electrical connection metals 170 are not particularly limited, and may be modified depending on design particulars. For example, the electrical connection metals 170 may be provided in an amount of several tens to several thousands according to the number of connection pads 122, or may also be provided in an amount of several tens to several thousands or more or several tens to several thousands or less. When the electrical connection metals 170 are solder balls, the electrical connection metals 170 may cover side surfaces of the underbump metals 160 extending onto one surface of the passivation layer 150, and connection reliability may be improved.

At least one of the electrical connection metals 170 may be disposed in a fan-out region. The fan-out region is a region except for (or outside of) a region in which the semiconductor chip 120 is disposed (e.g., a region outside an area of overlap with the semiconductor chip in a stacking direction of the semiconductor chip on the connection structure 140). The fan-out package may have reliability greater than that of a fan-in package, may implement a plurality of I/O terminals, and may easily perform 3D interconnection. In addition, as compared to a ball grid array (BGA) package, a land grid array (LGA) package, or the like, the package may be manufactured to have a small thickness, and may have price competitiveness.

A semiconductor package according to other exemplary embodiments in the present disclosure will be described with reference to FIGS. 13 and 14, and a description of the same portions as those of the exemplary embodiment described above will be omitted. In a semiconductor package 100B according to an exemplary embodiment of FIG. 13, a plurality of conductive vias serving to perform interlayer electricity conduction may be installed in the frame 110. In detail, the frame 110 may include a first insulating layer 111 a in contact with the connection structure 140, a first wiring layer 112 a in contact with the connection structure 140 and embedded in the first insulating layer 111 a, a second wiring layer 112 b disposed on the other surface of the first insulating layer 111 a opposing one surface of the first insulating layer 111 a in which the first wiring layer 112 a is embedded, a second insulating layer 111 b disposed on the first insulating layer 111 a and covering the second wiring layer 112 b, and a third wiring layer 112 c disposed on the second insulating layer 111 b. The first to third wiring layers 112 a, 112 b, and 112 c may be electrically connected to connection pads 122 through the connection structure 140. The first and second wiring layers 112 a and 112 b and the second and third wiring layers 112 b and 112 c may be electrically connected to each other through first and second connection vias 113 a and 113 b penetrating through the first and second insulating layers 111 a and 111 b, respectively.

When the first wiring layer 112 a is embedded in the first insulating layer 111 a, a step generated due to a thickness of the first wiring layer 112 a may be significantly reduced, and an insulating distance of the connection structure 140 may thus become constant. That is, a difference between a distance from a first redistribution layer 142 a of the connection structure 140 to a lower surface of the first insulating layer 111 a and a distance from the first redistribution layer 142 a of the connection structure 140 to the connection pads 122 of the semiconductor chip 120 may be smaller than a thickness of the first wiring layer 112 a. Therefore, a high density wiring design of the connection structure 140 may be implemented.

As shown, the lower surface of the first wiring layer 112 a of the frame 110 may be disposed on a level above a lower surface of the connection pad 122 of the semiconductor chip 120. In addition, a distance between the first redistribution layer 142 a of the connection structure 140 and the first wiring layer 112 a of the frame 110 may be greater than that between the first redistribution layer 142 a of the connection structure 140 and the connection pad 122 of the semiconductor chip 120. The reason is that the first wiring layer 112 a may be recessed into the insulating layer 111. As described above, when the first wiring layer 112 a is recessed into the first insulating layer 111 a, such that the lower surface of the first insulating layer 111 a and the lower surface of the first wiring layer 112 a have a step therebetween, a phenomenon in which a material of the encapsulant 130 bleeds to pollute the first wiring layer 112 a may be prevented.

The second wiring layer 112 b of the frame 110 may be disposed between an active surface and an inactive surface of the semiconductor chip 120. The frame 110 may be formed at a thickness corresponding to that of the semiconductor chip 120. Therefore, the second wiring layer 112 b formed in the frame 110 may be disposed on a level between the active surface and the inactive surface of the semiconductor chip 120.

Thicknesses of the wiring layers 112 a, 112 b, and 112 c of the frame 110 may be greater than those of the redistribution layers 142 a, 142 b, and 142 c of the connection structure 140. Since the frame 110 may have a thickness equal to or greater than that of the semiconductor chip 120, the wiring layers 112 a, 112 b, and 112 c may be formed at larger sizes (e.g., larger thicknesses and/or larger conductive pattern widths) depending on a scale of the frame 110. On the other hand, the redistribution layers 142 a, 142 b, and 142 c of the connection structure 140 may be formed at sizes relatively smaller than those of the wiring layers 112 a, 112 b, and 112 c for thinness.

A material of each of the insulating layers 111 a and 111 b is not particularly limited. For example, an insulating material may be used as the material of the insulating layers 111 a and 111 b. In this case, the insulating material may be a thermosetting resin such as an epoxy resin, a thermoplastic resin such as polyimide, a resin in which the thermosetting resin or the thermoplastic resin is mixed with inorganic filler, or impregnated together with inorganic filler in a core material such as a glass fiber (a glass cloth or a glass fabric), for example, prepreg, Ajinomoto Build-up Film (ABF), FR-4, Bismaleimide Triazine (BT), or the like. Alternatively, a PID resin may also be used as the insulating material.

The wiring layers 112 a, 112 b, and 112 c may serve to redistribute the connection pads 122 of the semiconductor chip 120. A material of each of the wiring layers 112 a, 112 b, and 112 c may be a conductive material such as copper (Cu), aluminum (Al), silver (Ag), tin (Sn), gold (Au), nickel (Ni), lead (Pb), titanium (Ti), or alloys thereof. The wiring layers 112 a, 112 b, and 112 c may perform various functions depending on designs of their corresponding layers. For example, the wiring layers 112 a, 112 b, and 112 c may include ground patterns, power patterns, signal patterns, and the like. Here, the signal patterns may include various signals except for the ground patterns, the power patterns, and the like, such as data signals, and the like. In addition, the wiring layers 112 a, 112 b, and 112 c may include via pads, wire pads, connection terminal pads, and the like.

The vias 113 a and 113 b may electrically connect the wiring layers 112 a, 112 b, and 112 c formed on different layers to each other, resulting in an electrical path in the frame 110. A material of each of the vias 113 a and 113 b may be a conductive material. Each of the vias 113 a and 113 b may be completely filled with a conductive material, or a conductive material may also be formed along a wall of each of via holes. In addition, each of the vias 113 a and 113 b may have different shapes, such as a tapered shape, a cylindrical shape, and the like. When holes for the first connection vias 113 a are formed, some of the pads of the first wiring layer 112 a may serve as a stopper, and it may thus be advantageous in a process that each of the first connection vias 113 a has the tapered shape of which a width of an upper surface is greater than that of a lower surface. In this case, the first connection vias 113 a may be integrated with pad patterns of the second wiring layer 112 b. In addition, when holes for the second connection vias 113 b are formed, some of the pads of the second wiring layer 112 b may serve as a stopper, and it may thus be advantageous in a process that each of the second connection vias 113 b has the tapered shape of which a width of an upper surface is greater than that of a lower surface. In this case, the second connection vias 113 b may be integrated with pad patterns of the third wiring layer 112 c.

Next, a semiconductor package 100C according to an exemplary embodiment of FIG. 14 will be described. In the semiconductor package 100C, a frame 110 may include a first insulating layer 111 a, a first wiring layer 112 a and a second wiring layer 112 b disposed on opposite surfaces of the first insulating layer 111 a, respectively, a second insulating layer 111 b disposed on the first insulating layer 111 a and covering the first wiring layer 112 a, a third wiring layer 112 c disposed on the second insulating layer 111 b, a third insulating layer 111 c disposed on the first insulating layer 111 a and covering the second wiring layer 112 b, and a fourth wiring layer 112 d disposed on the third insulating layer 111 c. The first to fourth wiring layers 112 a, 112 b, 112 c, and 112 d may be electrically connected to connection pads 122. Since the frame 110 may include a large number of wiring layers 112 a, 112 b, 112 c, and 112 d, a connection structure 140 may be further simplified. Therefore, a decrease in a yield depending on a defect occurring in a process of forming the connection structure 140 may be suppressed. Meanwhile, the first to fourth wiring layers 112 a, 112 b, 112 c, and 112 d may be electrically connected to each other through first to third connection vias 113 a, 113 b, and 113 c each penetrating through a respective one of the first to third insulating layers 111 a, 111 b, and 111 c.

The first insulating layer 111 a may have a thickness greater than those of the second insulating layer 111 b and the third insulating layer 111 c. The first insulating layer 111 a may be basically relatively thick in order to maintain rigidity, and the second insulating layer 111 b and the third insulating layer 111 c may be introduced in order to form a larger number of wiring layers 112 c and 112 d. The first insulating layer 111 a may include an insulating material different from those of the second insulating layer 111 b and the third insulating layer 111 c. For example, the first insulating layer 111 a may be, for example, prepreg including a core material, a filler, and an insulating resin, and the second insulating layer 111 b and the third insulating layer 111 c may be an ABF or a PID film including a filler and an insulating resin. However, the materials of the first insulating layer 111 a and the second and third insulating layers 111 b and 111 c are not limited thereto. Similarly, the first connection vias 113 a penetrating through the first insulating layer 111 a may have a diameter greater than those of second and third connection vias 113 b and 113 c penetrating through the second and the third insulating layers 111 b and 111 c, respectively.

A lower surface of the third wiring layer 112 c of the frame 110 may be disposed on a level below a lower surface of the connection pad 122 of the semiconductor chip 120. In addition, a distance between the first redistribution layer 142 a of the connection structure 140 and the third wiring layer 112 c of the frame 110 may be smaller than that between the first redistribution layer 142 a of the connection structure 140 and the connection pad 122 of the semiconductor chip 120. The reason is that the third wiring layer 112 c may be disposed in a protruding form on the second insulating layer 111 b, resulting in being in contact with the connection structure 140.

The first wiring layer 112 a and the second wiring layer 112 b of the frame 110 may be disposed between an active surface and an inactive surface of the semiconductor chip 120. The frame 110 may be formed at a thickness corresponding to that of the semiconductor chip 120. Therefore, the first wiring layer 112 a and the second wiring layer 112 b formed in the frame 110 may be disposed on levels between the active surface and the inactive surface of the semiconductor chip 120.

Thicknesses of the wiring layers 112 a, 112 b, 112 c, and 112 d of the frame 110 may be greater than those of the redistribution layers 142 a, 142 b, and 142 c of the connection structure 140. Since the frame 110 may have a thickness equal to or greater than that of the semiconductor chip 120, the wiring layers 112 a, 112 b, 112 c, and 112 d may also be formed at larger sizes. On the other hand, the redistribution layers 142 a, 142 b, and 142 c of the connection structure 140 may be formed at relatively small sizes for thinness.

In the present disclosure, terms “lower side”, “lower portion”, “lower surface”, and the like, have been used to indicate a downward direction in relation to cross sections of the drawings, and terms “upper side”, “upper portion”, “upper surface”, and the like, have been used to indicate a direction opposing the direction indicated by the terms “lower side”, “lower portion”, “lower surface”, and the like. However, these directions are defined for convenience of explanation, and the claims are not particularly limited by the directions defined as described above, and the concept of the upper portion and the lower portion may be changed at any time.

The meaning of a “connection” of a component to another component in the description includes an indirect connection through an adhesive layer as well as a direct connection between two components. In addition, “electrically connected” means the concept including a physical connection and a physical disconnection. It can be understood that when an element is referred to with “first” and “second”, the element is not limited thereby. The terms may be used only for a purpose of distinguishing one element from other elements, and may not limit the sequence or importance of the elements. In some cases, a first component may be named a second component and a second component may also be similarly named a first component, without departing from the scope of the present disclosure.

The term “an exemplary embodiment” used herein does not refer to the same exemplary embodiment, and is provided to emphasize a particular feature or characteristic different from that of another exemplary embodiment. However, exemplary embodiments provided herein are considered to be able to be implemented by being combined in whole or in part one with another. For example, one element described in a particular exemplary embodiment, even if it is not described in another exemplary embodiment, may be understood as a description related to another exemplary embodiment, unless an opposite or contradictory description is provided therein.

Terms used herein are used only in order to describe an exemplary embodiment rather than limiting the present disclosure. In this case, singular forms include plural forms unless interpreted otherwise in context.

As set forth above, according to the exemplary embodiments in the present disclosure, the semiconductor package in which the bleeding defect due to the encapsulant may be suppressed and the reliability of the vias may be improved may be implemented.

While exemplary embodiments have been shown and described above, it will be apparent to those skilled in the art that modifications and variations could be made without departing from the scope of the present invention as defined by the appended claims. 

What is claimed is:
 1. A semiconductor package comprising: a connection structure including an insulating layer, a redistribution layer disposed on the insulating layer, and a connection via penetrating through the insulating layer and connected to the redistribution layer; a semiconductor chip having an active surface on which connection pads are disposed and an inactive surface opposing the active surface, and having the active surface disposed on the connection structure to face the connection structure; and an encapsulant covering at least a portion of the semiconductor chip, wherein the semiconductor chip includes a groove disposed in the active surface and a dam structure disposed around the groove in the active surface, wherein the dam structure comprises a first dam segment formed on a first side of the groove and a second dam segment formed on a second side of the groove.
 2. The semiconductor package of claim 1, wherein the groove is disposed between an edge of the semiconductor chip and the connection pads.
 3. The semiconductor package of claim 1, wherein the groove is continuously disposed around a periphery of the active surface of the semiconductor chip.
 4. The semiconductor package of claim 1, wherein the semiconductor chip includes a plurality of grooves, including the groove, each continuously formed along a respective edge of the active surface of the semiconductor chip and disconnected from each other.
 5. The semiconductor package of claim 4, wherein the semiconductor chip includes a passivation layer extending along corner regions of the active surface between adjacent grooves of the plurality of grooves.
 6. The semiconductor package of claim 1, wherein the groove has a plurality of inclined surfaces, inclined at different angles with respect to the active surface.
 7. The semiconductor package of claim 1, wherein the groove is a laser-machined groove penetrating into the active surface.
 8. The semiconductor package of claim 7, wherein the dam structure is a burr formed by laser-machining the semiconductor chip and extends outwardly from the active surface.
 9. The semiconductor package of claim 1, further comprising: a frame disposed on the connection structure and having a through-hole having the semiconductor chip disposed therein.
 10. The semiconductor package of claim 9, wherein the encapsulant fills the through-hole, and covers the inactive surface and side surfaces of the semiconductor chip.
 11. The semiconductor package of claim 10, wherein the encapsulant extends to a portion of the active surface of the semiconductor chip.
 12. The semiconductor package of claim 1, wherein the encapsulant is filled in at least a portion of the groove.
 13. A semiconductor chip comprising: a body having a planar surface; a plurality of connection pads disposed along the planar surface and electrically connected to electrical circuits in the body; a groove penetrating into the planar surface along a periphery of the planar surface; and a dam structure extending from the planar surface along a periphery of the groove, wherein the groove and dam are disposed between the plurality of connection pads and an edge of the planar surface of the body, wherein the dam structure comprises a first dam segment formed on a first side of the groove and a second dam segment formed on a second side of the groove.
 14. The semiconductor chip of claim 13, wherein groove extends integrally around an entire periphery of the planar surface of the body to surround all connection pads disposed on the planar surface.
 15. The semiconductor chip of claim 14, wherein the dam comprises a first dam extending integrally around the entire periphery of the planar surface of the body between the groove and the periphery of the planar surface, and a second dam extending integrally around the entire periphery of the planar surface of the body between the groove and the plurality of connection pads.
 16. The semiconductor chip of claim 13, wherein the groove comprises a plurality of groove segments each disposed along a respective edge of an active surface of the semiconductor chip and spaced apart from other grooves.
 17. The semiconductor chip of claim 16, further comprising a plurality of passivation layer segments each extending along corner regions of the active surface between adjacent groove segments of the plurality of groove segments.
 18. The semiconductor chip of claim 16, wherein the dam comprises a plurality of dam segments each extending along an edge of a respective groove segment.
 19. A semiconductor package comprising: the semiconductor chip of claim 13; a connection structure including an insulating layer, a redistribution layer disposed on the insulating layer, and a connection via penetrating through the insulating layer and connected to the redistribution layer and a connection pad of the semiconductor chip; and an encapsulant covering at least a portion of the semiconductor chip, and extending partially into the groove of the semiconductor chip.
 20. The semiconductor package of claim 1, wherein the first dam segment is formed between the groove and an edge of the semiconductor chip closest to the groove. 